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      Semiconductor Process Reliability in Practice

      2 in stock

      Firm sale: non returnable item
      SKU 9780071754279 Categories ,
      Select Guide Rating
      Filled with practical examples, this is a comprehensive reference on process reliability for semiconductor process and design engineers.

      Publisher''s Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, <span style="...

      £147.99

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      Description

      Product ID:9780071754279
      Product Form:Hardback
      Country of Manufacture:US
      Title:Semiconductor Process Reliability in Practice
      Authors:Author: Juin Liou, Zhenghao Gan, Waisum Wong
      Page Count:624
      Subjects:Communications engineering / telecommunications, Communications engineering / telecommunications
      Description:Select Guide Rating
      Filled with practical examples, this is a comprehensive reference on process reliability for semiconductor process and design engineers.

      Publisher''s Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.


      Proven processes for ensuring semiconductor device reliability

      Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.

      Coverage includes:

      • Basic device physics
      • Process flow for MOS manufacturing
      • Measurements useful for device reliability characterization
      • Hot carrier injection
      • Gate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)
      • Negative bias temperature instability
      • Plasma-induced damage
      • Electrostatic discharge protection of integrated circuits
      • Electromigration
      • Stress migration
      • Intermetal dielectric breakdown


      Imprint Name:McGraw-Hill Professional
      Publisher Name:McGraw-Hill Education - Europe
      Country of Publication:GB
      Publishing Date:2012-11-16

      Additional information

      Weight1050 g
      Dimensions234 × 158 × 38 mm